TC7SG00FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG00FE
2-Input NAND Gate
Features
• High outp...
TC7SG00FE
TOSHIBA
CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG00FE
2-Input NAND Gate
Features
High output current
: ±8 mA (min) at VCC = 3.0 V
Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF
Operating
voltage range : VCC = 0.9 to 3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
Weight: 0.003 g (typ.)
Marking
W1
Product Name
Pin Assignment (top view)
IN B 1
5 VCC
IN A 2
GND 3
4 OUT Y
(ESV)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply
voltage DC input
voltage
DC output
voltage
Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature
VCC VIN
VOUT
IIK IOK IOUT ICC PD Tstg
−0.5 to 4.6
V
−0.5 to 7.0
V
−0.5 to 4.6 (Note 1) V
−0.5 to VCC + 0.5 (Note 2)
−20
mA
−20
(Note 3) mA
±25
mA
±50
mA
150
mW
−65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and...