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TC7SG125FU Datasheet

Part Number TC7SG125FU
Manufacturers Toshiba
Logo Toshiba
Description Bus Buffer
Datasheet TC7SG125FU DatasheetTC7SG125FU Datasheet (PDF)

TC7SG125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG125FU Bus Buffer with 3-STATE Output Features • High output current : ±8 mA (min) at VCC = 3.0 V • High-speed operation : tpd = 2.4 ns (typ.) at VCC = 3.3 V, CL = 15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. • ESD performance : Machine model ≥ ±200 V Human body model ≥ ±2000 V Weight: 0.006 g (typ.) Marking WB Product name Pin Assignment .

  TC7SG125FU   TC7SG125FU






Part Number TC7SG125FE
Manufacturers Toshiba
Logo Toshiba
Description Bus Buffer
Datasheet TC7SG125FU DatasheetTC7SG125FE Datasheet (PDF)

TC7SG125FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG125FE Bus Buffer with 3-STATE Output Features • High output current: ±8 mA (min) at VCC = 3.0 V • High-speed operation: tpd = 2.4 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. Marking WB Product name Weight: 0.003 g (typ.) Pin Assignment (top view) G1 5 VCC IN A 2 (ESV) GND 3 4 OUT Y Absolute Maximum Ratings (Ta.

  TC7SG125FU   TC7SG125FU







Bus Buffer

TC7SG125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG125FU Bus Buffer with 3-STATE Output Features • High output current : ±8 mA (min) at VCC = 3.0 V • High-speed operation : tpd = 2.4 ns (typ.) at VCC = 3.3 V, CL = 15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. • ESD performance : Machine model ≥ ±200 V Human body model ≥ ±2000 V Weight: 0.006 g (typ.) Marking WB Product name Pin Assignment (top view) G1 IN A 2 5 VCC GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 4.6 V −0.5 to 7.0 V −0.5 to 4.6 (Note 1) V −0.5 to VCC + 0.5 (Note 2) −20 mA −20 (Note 3) mA ±25 mA ±50 mA 200 mW −65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and.


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