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TC7SG86FU Datasheet

Part Number TC7SG86FU
Manufacturers Toshiba
Logo Toshiba
Description 2-Input EXCLUSIVE OR Gate
Datasheet TC7SG86FU DatasheetTC7SG86FU Datasheet (PDF)

TC7SG86FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FU 2-Input EXCLUSIVE OR Gate Features • High output current : ±8 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.6 ns (typ.) at VCC = 3.3 V, 15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. Marking W8 Product name Weight: 0.006 g (typ.) Pin Assignment (top view) IN B 1 5 VCC IN A 2 GND 3 4 OUT Y Absolute Maximum Ratings (Ta .

  TC7SG86FU   TC7SG86FU






Part Number TC7SG86FE
Manufacturers Toshiba
Logo Toshiba
Description 2-Input EXCLUSIVE OR Gate
Datasheet TC7SG86FU DatasheetTC7SG86FE Datasheet (PDF)

TC7SG86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FE 2-Input EXCLUSIVE OR Gate Features • High output current : ±8 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.6 ns (typ.) at VCC = 3.3 V, 15pF • Operating voltage range: VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. Marking W8 Product name Weight: 0.003 g (typ.) (ESV) Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Characteristic Supply v.

  TC7SG86FU   TC7SG86FU







2-Input EXCLUSIVE OR Gate

TC7SG86FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FU 2-Input EXCLUSIVE OR Gate Features • High output current : ±8 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.6 ns (typ.) at VCC = 3.3 V, 15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. Marking W8 Product name Weight: 0.006 g (typ.) Pin Assignment (top view) IN B 1 5 VCC IN A 2 GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 4.6 V −0.5 to 7.0 V −0.5 to 4.6 (Note 1) V −0.5 to VCC + 0.5 (Note 2) −20 mA −20 (Note 3) mA ±25 mA ±50 mA 200 mW −65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report .


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