Gate. TC7SH09F Datasheet

TC7SH09F Datasheet PDF


TC7SH09F
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SH09F
TC7SH09F
1. Functional Description
• 2-Input AND Gate (Open Drain)
2. Features
(1) AEC-Q100 (Rev. H) (Note 1)
(2) Wide operating temperature : Topr =-40 to 125 (Note 2)
(3) High speed operation: tpZL = 3.2 ns (typ.) (VCC = 5.0 V, CL = 15 pF)
(4) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 )
(5) Wide operating voltage range: VCC = 2.0 to 5.5 V
(6) 5.5 V tolerant inputs
(7) 5.5 V power down protection output
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
SMV
©2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2011-08
2017-12-21
Rev.4.0


Part TC7SH09F
Description 2-Input AND Gate
Feature TC7SH09F; TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH09F 2-Input AND Gate (Open Drain Out.
Manufacture Toshiba
Datasheet
Download TC7SH09F Datasheet

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T TC7SH09F Datasheet
CMOS Digital Integrated Circuits Silicon Monolithic TC7SH09F TC7SH09FU Datasheet





TC7SH09F
4. Marking and Pin Assignment
TC7SH09F
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
ABY
LLL
LHL
HL L
HHZ
Z: High impedance
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN -0.5 to 7.0
DC output voltage
VOUT
(Note 1)
-0.5 to 7.0
Input diode current IIK -20 mA
Output diode current
IOK (Note 2)
-20
DC output current
IOUT
+25
VCC/ground current ICC ±50
Power dissipation
PD 200 mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Do not exceed IOUT of absolute maximum ratings.
Note 2: VOUT < GND
©2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-21
Rev.4.0



TC7SH09F
8. Operating Ranges (Note)
TC7SH09F
Characteristics
Symbol
Note
Test Condition
Rating
Supply voltage
VCC
2.0 to 5.5
Input voltage
VIN
0 to 5.5
Output voltage
VOUT
(Note 1)
(Note 2)
0 to 5.5
0 to VCC
Operating temperature
Topr (Note 3)
-40 to 125
(Note 4)
-40 to 85
Input rise and fall time
dt/dv
VCC = 3.3 ± 0.3 V
0 to 100
VCC = 5.0 ± 0.5 V
0 to 20
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: High impedance state.
Note 2: Low state.
Note 3: For devices with the ordering part number ending in J(CT.
Note 4: For devices except those with the ordering part number ending in J(CT.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Unit
V
V
V
ns/V
Characteristics
High-level input voltage
Symbol
VIH
Test Condition
Low-level input voltage
VIL
Low-level output voltage
VOL VIN = VIL
IOL = 50 µA
Input leakage current
3-state output OFF-state
leakage current
Power-OFF leakage current
Quiescent supply current
IOL = 4 mA
IOL = 8 mA
IIN VIN = 5.5 V or GND
IOZ VIN = VIH
VOUT = VCC or GND
IOFF VIN = 5.5 V
or VOUT = 0 to 5.5 V
ICC VIN = VCC or GND
VCC (V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
3.0
4.5
0 to 5.5
0 to 5.5
0.0
5.5
Min
1.5
VCC × 0.7
Typ.
0.0
0.0
0.0
Max
0.5
VCC × 0.3
0.1
0.1
0.1
0.36
0.36
±0.1
±0.25
1.0
2.0
Unit
V
V
V
µA
µA
µA
µA
©2017
Toshiba Electronic Devices & Storage Corporation
3
2017-12-21
Rev.4.0






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