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TC7SH86FE Datasheet

Part Number TC7SH86FE
Manufacturers Toshiba
Logo Toshiba
Description 2-Input EXCLUSIVE OR Gate
Datasheet TC7SH86FE DatasheetTC7SH86FE Datasheet (PDF)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FE TC7SH86FE 2-Input EXCLUSIVE OR Gate Features • High speed operation : tpd = 4.8 ns (typ.) at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs. • Wide operating voltage range: VCC = 2 to 5.5 V Weight: 0.003 g (typ.) Marking Pin Assignment (top view) H8 Product name IN B 1 IN A 2 5 VCC (ESV) GND 3 4 OUT Y Absolute Max.

  TC7SH86FE   TC7SH86FE






Part Number TC7SH86FU
Manufacturers Toshiba
Logo Toshiba
Description EXCLUSIVE OR GATE
Datasheet TC7SH86FE DatasheetTC7SH86FU Datasheet (PDF)

TC7SH86F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86F, TC7SH86FU 2-Input EXCLUSIVE OR Gate Features • High speed operation : tpd = 4.8 ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs. • Balanced Propagation Delay : tpLH ≈ tpHL • Wide operating voltage range: VCC = 2 to 5.5 V TC7SH86F TC7SH86FU Marking H8 Product name Weight SSOP5-P-0.95 : 0.016 g (typ.) S.

  TC7SH86FE   TC7SH86FE







Part Number TC7SH86FS
Manufacturers Toshiba
Logo Toshiba
Description 2-Input EXCLUSIVE OR Gate
Datasheet TC7SH86FE DatasheetTC7SH86FS Datasheet (PDF)

TC7SH86FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FS 2-Input EXCLUSIVE OR Gate Features • High speed : tpd = 4.8 ns (typ.) at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs. • Wide operating voltage range: VCC = 2 to 5.5 V SON5-P-0.35 Weight : 0.001 g (typ.) (fSV) Marking H8 Product name Pin Assignment (top view) IN A 1 5 VCC GND 2 IN B 3 4 OUT Y Abs.

  TC7SH86FE   TC7SH86FE







Part Number TC7SH86F
Manufacturers Toshiba
Logo Toshiba
Description EXCLUSIVE OR GATE
Datasheet TC7SH86FE DatasheetTC7SH86F Datasheet (PDF)

TC7SH86F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86F, TC7SH86FU 2-Input EXCLUSIVE OR Gate Features • High speed operation : tpd = 4.8 ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs. • Balanced Propagation Delay : tpLH ≈ tpHL • Wide operating voltage range: VCC = 2 to 5.5 V TC7SH86F TC7SH86FU Marking H8 Product name Weight SSOP5-P-0.95 : 0.016 g (typ.) S.

  TC7SH86FE   TC7SH86FE







2-Input EXCLUSIVE OR Gate

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FE TC7SH86FE 2-Input EXCLUSIVE OR Gate Features • High speed operation : tpd = 4.8 ns (typ.) at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs. • Wide operating voltage range: VCC = 2 to 5.5 V Weight: 0.003 g (typ.) Marking Pin Assignment (top view) H8 Product name IN B 1 IN A 2 5 VCC (ESV) GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg − 0.5 to 7 V − 0.5 to 7 V − 0.5 to VCC + 0.5 V − 20 mA ± 20 (Note 1) mA ± 25 mA ± 50 mA 150 mW − 65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and esti.


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