TC7WG00FK

TC7WG00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG00FU, TC7WG00FK Dual 2-Input NAND Gate Features High output current : ±8 mA (min) at VCC = 3 V Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF Operating voltage range : VCC = 0.9 to 3.6 V 5.5-V tolerant inputs 3.6-V power down protection outputs TC7WG00FU TC7WG00FK (SM8) Marking SM8 G 00 Product Name US8 Lot No. WG 00 (US8) Weight: SSOP8-P-0.65 SSOP8-P-0.50A : 0.02 g (typ.) : 0.01 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/GND current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating Unit −0.5 to 4.6 V −0.5 to 7.0 V −0.5 to 4.6 (Note1) V −0.5 to VCC+0.5 (Note2) −20 mA −20 (Note 3) mA ±25 mA ±50 mA 300 (SM8) mW 200 (US8) −65 to 150 °C 1A 1 1B 2 2Y 3 GND 4 8 VCC 7 1Y 6 2B 5 2A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability H...