Drop-Out Regulator. TCR3DM45 Datasheet

TCR3DM45 Datasheet PDF


Part Number

TCR3DM45

Description

300mA CMOS Low Drop-Out Regulator

Manufacture

Toshiba

Total Page 14 Pages
Datasheet
Download TCR3DM45 Datasheet


TCR3DM45
TCR3DM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR3DM series
300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit
The TCR3DM series are CMOS general-purpose single-output
voltage regulators with an on/off control input, featuring low dropout
voltage, low output noise voltage and low inrush current.
These voltage regulators are available in fixed output voltages
between 1.0 V and 4.5 V and capable of driving up to 300 mA.
They feature over-current protection, over-temperature protection,
Inrush current protection circuit and Auto-discharge function.
The TCR3DM series are offered in the ultra small plastic mold
package DFN4 (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout
voltage of 210 mV (2.5 V output, IOUT = 300 mA) with low output
noise voltage of 38 μVrms (2.5 V output) and a load transient
response of only ΔVOUT = ±80 mV ( IOUT = 1 mA300 mA, COUT
=1.0 μF).
BOTTOM VIEW ILLUSTRATION
DFN4
Weight : 1.3 mg ( typ.)
As small ceramic input and output capacitors can be used with the
TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as
cellular phones.
Features
Low Drop-Out voltage
VIN-VOUT = 210 mV (typ.) at 2.5 V-output, IOUT = 300 mA
VIN-VOUT = 270 mV (typ.) at 1.8 V-output, IOUT = 300 mA
VIN-VOUT = 490 mV (typ.) at 1.2 V-output, IOUT = 300 mA
Low output noise voltage
VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz f 100 kHz
Fast load transient response (ΔVOUT = ±80 mV (typ.) at IOUT = 1 mA300 mA, COUT =1.0 μF )
High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, IOUT = 10 mA, f =1kHz )
Over-current protection
Over-temperature protection
Inrush current protection circuit
Auto-discharge function
Pull down connection between CONTROL and GND
Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF )
Ultra small package DFN4 (1.0 mm x 1.0 mm ; t 0.58 mm )
Start of commercial production
2013-03
1 2017-06-20

TCR3DM45
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Input voltage
Control voltage
Output voltage
Output current
Power dissipation
Operation temperature range
Junction temperature
Storage temperature range
Symbol
VIN
VCT
VOUT
IOUT
PD
Topr
Tj
Tstg
Rating
Unit
6.0
-0.3 to 6.0
-0.3 to VIN + 0.3
300
420 (Note1)
-40 to 85
150
-55 to 150
V
V
V
mA
mW
°C
°C
°C
TCR3DM series
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1:
Rating at mounting on a board
Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board.
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole hall: diameter 0.5mm x 24
Pin Assignment (top view)
VIN CONTROL
43
*
1
VOUT
2
GND
*Center electrode should be connected to GND or Open
2 2017-06-20





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