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TD200F Datasheet

Part Number TD200F
Manufacturers Eupec
Logo Eupec
Description THYRISTOR MODULE
Datasheet TD200F DatasheetTD200F Datasheet (PDF)

www.DataSheet4U.com European PowerSemiconductor and Electronics Company Marketing Information TT 200 F 35 28,5 5 6 www.DataSheet4U.com 80 9 18 M8 92 18 115 AK K K1 G1 K2 G2 A VWK Okt. 1996 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSheet4U.com Elektrische Eigenschaften Höchstzulässige Werte TT 200 F, TD 200 F, DT 200 F Periodische Vorwärts- und Rückwärts- repetitive peak forward off-state and tvj = -40°C...t vj max Spitzensperrspannung reverse voltages Vo.

  TD200F   TD200F






Part Number TD200A-SP1
Manufacturers Topstek
Logo Topstek
Description Current Transducers
Datasheet TD200F DatasheetTD200A-SP1 Datasheet (PDF)

TopsTek Current Transducers TD25A-SP1 .. TD400A-SP1 TD 25A~400A-SP1 Features ♦ High reliability Hall effect device ♦ Compact and light weight ♦ Quick response speed (7 µsec) ♦ Excellent linearity of the output voltage over a wide input range ♦ Excellent frequency response (> 50 kHz) ♦ Low power consumption (12 mA nominal) ♦ Capability of measuring both DC, AC, pulsed and Mixed ♦ High isolation voltage between the measuring circuit and the current-carrying conductor (AC2.5KV) ♦ Extended operati.

  TD200F   TD200F







Part Number TD200A
Manufacturers Topstek
Logo Topstek
Description Current Transducers
Datasheet TD200F DatasheetTD200A Datasheet (PDF)

Topstek Current Transducers TD25A .. TD400A TD 25A~400A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide input range ♦ Excellent frequency response (> 50 kHz) ♦ Low power consumption (12 mA nominal) ♦ Capable of measuring both DC and AC, both pulsed and mixed ♦ High isolation voltage between the measuring circuit and the current-carrying conductor (AC2.5KV) ♦ Extended operating temperature rang.

  TD200F   TD200F







Part Number TD2002
Manufacturers TELSA
Logo TELSA
Description ADSL Transformer
Datasheet TD200F DatasheetTD2002 Datasheet (PDF)

ADSL Transformer TD2002 Texas Instruments Chip EP 13 transformer Per UL1950, EN60950 and IEC950 OCL 6 Turn Ratio Line 10 kHz 100mV 75 µH (1-4):(10-7) 10 kHz 100mV 2:1 DCR (Max.) (1-4) 0.5 DCR (Max.) (10-7) 0.3 Hi-Pot Leakege Inductance (Max.) (1-4) to (10-7)) 1500 Vac 500 µA 1 minute (1-4) to (10-7)) µH 5 Total Harmonic Distortion (Min.) dB 100 kHz, 5Vp-p - 80 1 10 0.530 (13.45) 4 7 Max. Packaging: Add -T for Tape and Reel, TD2002-T Dimensions are in inches/(mm) = 0.010(0.25) TESLA .

  TD200F   TD200F







Part Number TD2001Y
Manufacturers Siliconix
Logo Siliconix
Description Dual P-Channel Enhancement Mode MOSFETs
Datasheet TD200F DatasheetTD2001Y Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com .

  TD200F   TD200F







THYRISTOR MODULE

www.DataSheet4U.com European PowerSemiconductor and Electronics Company Marketing Information TT 200 F 35 28,5 5 6 www.DataSheet4U.com 80 9 18 M8 92 18 115 AK K K1 G1 K2 G2 A VWK Okt. 1996 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSheet4U.com Elektrische Eigenschaften Höchstzulässige Werte TT 200 F, TD 200 F, DT 200 F Periodische Vorwärts- und Rückwärts- repetitive peak forward off-state and tvj = -40°C...t vj max Spitzensperrspannung reverse voltages Vorwärts-Stoßspitzenspannung non-repetitive peak forward off-state tvj = -40°C...t vj max voltage Rückwärts-Stoßspitzenspannung non-repetitive peak reverse voltage tvj = +25°C...t vj max Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom Stoßstrom-Grenzwert Grenzlastintegral Kritische Stromsteilheit Kritische Spannungssteilheit RMS on-state current average on-state current surge current ∫I2 t-value critical rate of rise of on-state current tc = 85°C tc = 68°C tvj = 25°C, t p = 10 ms tvj = tvj max , tp = 10 ms tvj = 25°C, t p = 10 ms tvj = tvj max , tp = 10 ms VD≤67%VDRM , f0=50Hz IGM =1A, diG/dt=1A/µs critical rate of rise of off-state voltage tvj = tvj max , VD = 67% V DRM 6.Kennbuchstabe/6th letter B 6.Kennbuchstabe/6th letter C 6.Kennbuchstabe/6th letter L 6.Kennbuchstabe/6th letter M tvj = tvj max , iT = 700 A tvj = tvj max tvj = tvj max tvj = 25 °C, v D = 6 V tvj = 25 °C, v D = 6 V tvj = tvj max , vD = 6 V tvj = tvj max , vD = 0,5 V DRM tvj = 25 °C, v D = 6 V, R A = 10 Ω tvj = 25 °C,v .


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