DatasheetsPDF.com

TD357EG Datasheet

Part Number TD357EG
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet TD357EG DatasheetTD357EG Datasheet (PDF)

TD357EG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 74A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 74 44 130 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Tempera.

  TD357EG   TD357EG






N-Channel MOSFET

TD357EG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 74A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 74 44 130 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.2 °C / W REV 1.1 1 2014/7/11 TD357EG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Thresh.


2017-02-07 : C251J473    C242J223    PZ0703ED    P0910A    PD6A6BA    P0660AS    P2204ND5G    P2804ND5G    P3004ND5G    P0465CS   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)