T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31058 uses advanced trench technolo...
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31058 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 18.2mΩ @ VGS=4.5V
RDS(ON) < 13.5mΩ @ VGS=10V High Power and current handling capability Lead free product is available DFN5X6‐8 Package
Application
PWM applications Load switch Power management Hard Switched and High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source
Voltage
VDS
Gate‐Source
Voltage
VGS
Diode Continuous Forward Current Pulsed Drain Current
IS(TA=25℃) IDM(TA=25℃)
Drain Current @ Continuous
ID(TA=25℃) ID(TA=70℃)...