T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31522 uses advanced trench technolog...
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31522 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 38mΩ @ VGS=10V Reliable and Rugged Lead free product is available DFN5X6‐8 Package
Application
PWM applications Load switch Power management
DATASHEET
TDM31522
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source
Voltage Gate‐Source
Voltage Diode Continuous Forward Current Drain Current @ Continuous Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation
Drain Current @ Continuous
Maximum Power Dissipation (TA=25℃) Avalanche Energy, Single pulse(L=0.5mH)
Symbol
VDS
VGS IS(TC=25...