T echcode®
P-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3415 uses advanced trench technology...
T echcode®
P-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3415 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
‐30V/‐17.6A RDS(ON) < 15mΩ @ VGS=‐4.5V
RDS(ON) < 9mΩ @ VGS=‐10V Reliable and Rugged HBM ESD capability level of 8KV typical Lead free product is available DFN5X6 Package
Application
PWM applications Load switch Power management
DATASHEET
TDM3415
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source
Voltage Gate‐Source
Voltage
Continuous Drain Current(VGS=‐10V) (note1)
300μs Pulsed Drain Current Tested (note1) Diode Continuous Forward Current (note2)
Maximum Power Dissipation (note1)
Maximum Junct...