T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3550 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
40V/100A RDS(ON) <1.35mΩ @ VGS=10V
High Power and current handling capability Surface Mount Package Lead Free and Green Devices available(RoHS Compliant)
Application
PWM applications Load switch.
N-Channel Enhancement Mode MOSFET
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3550 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
40V/100A RDS(ON) <1.35mΩ @ VGS=10V
High Power and current handling capability Surface Mount Package Lead Free and Green Devices available(RoHS Compliant)
Application
PWM applications Load switch Power management Powered Systems
DATASHEET
TDM3550
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source Voltage Gate‐Source Voltage Drain Current @ Continuous (Note 4) Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation (Note 5、6)
Drain Current @ Continuous (Note 2)
Maximum Power Dissipation(Note 2) .