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TDPF10B60

TRinno

10A Fast Recovery Diode

Features  600V Diode Technology  Fast Recovery  Soft Switching  Low Forward Voltage  RoHS Compliant  JEDEC Qualifi...


TRinno

TDPF10B60

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Description
Features  600V Diode Technology  Fast Recovery  Soft Switching  Low Forward Voltage  RoHS Compliant  JEDEC Qualification Applications  General Rectification TDPF10B60 600V, 10A Fast Recovery Diode Cathode Anode Cathode Anode Device TDPF10B60 Package TO-220F-2L Absolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage Reverse Blocking Voltage Average Rectified Forward Current Non-Repetitive Peak Surge Current 60Hz Single Half Sine Wave Storage Temperature Range TC = 70 ℃ Thermal Characteristics Parameter Maximum Thermal Resistance, Junction-to-Case Marking TDPF10B60 Remark RoHS Symbol VRRM VR IF(AV) IFSM TSTG Value 600 600 10 100 -55 ~ 150 Unit V V A A ℃ Symbol RθJC Value 4.6 Unit ℃/W Electrical Characteristics TC=25℃, unless otherwise noted Parameter Symbol Test Condition STATIC Forward Voltage Drop Reverse Leakage Current DYNAMIC Reverse Recovery Time VF IR trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr IF =10A, TC=25 oC IF =10A, TC=150 oC VR = 600V VR = 400V, IF = 10A, di/dt=200A/μs TC=25 oC TC=150 oC TC=25 oC TC=150 oC TC=25 oC TC=150 oC Min. ---- ------- January 2015 : Rev 2.1 www.trinnotech.com Typ. 1.6 1.4 -- 58 110 4.5 7.6 139 528 Max. 2.1 1.9 100 ------- Unit V V μA ns A nC 1/3 TDPF10B60 Fig.1 Forward voltage drop vs. Forward current 40 FORWARD CURRENT, I [A] F 30 T = 150 oC 20 C T = 125 oC C T = 75 oC C T = 25 oC C 10 0 0123 FORWARD VOLTAGE, V [V] F Fig 3. Junction capacitance 120 JUNCTION CAPAC...




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