SD1732 (TDS595)
RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS
. . . . . . . . . .
470 - 860 MHz 25 VOLTS CLASS A P...
SD1732 (TDS595)
RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS
. . . . . . . . . .
470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 14.0 W MIN. WITH 8.5 dB GAIN
.250 x .320 4LFL (M156) epoxy sealed ORDER CODE SD1732 BRANDING TDS595
PIN CONNECTION
DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
45 25 4.0 2 x 2.6 65 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
2.5
°C/W
1/6
SD1732 (TDS595)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVEBO hFE
IC = 20mA IC = 40mA IE = 5mA VCE = 20V
IE = 0mA IB = 0mA IC = 0mA IC = 0.5A
45 25 3.0 10
— — — —
— — — —
V V V —
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT GP IMD3* CMD** COB
Note:
f = 845 MHz POUT = 14 W POUT = 14 W POUT = 14 W f = 1 MHz − 8 dB...