TE13004D

TE13004D TE13005D Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planar passivation D Very short switching times D Very low switching losses D www.DataSheet4U.com Very low dynamic saturation D Very low operating temperature D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Type TE13004D TE13005D TE13004D TE13005D Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 300 400 600 700 9 6 8 2 4 57 150 –65 to +150 Unit V V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.2 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 1 (9) TE13004D TE13005D Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Transistor Collector cut-off current Test Conditions VCE = 600 V VCE = 700 V VCE = 600 V; Tcase = 150° C VCE = 700 V; Tcase = 150° C IC = 100 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 2 A; IB = 0.4 A IC = 2 A; IB = 0.4 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 4 A IC = 2 A; IB = 0.2 A; t ...