circuit. TEA5591 Datasheet

TEA5591 Datasheet PDF


Part TEA5591
Description AM/FM radio receiver circuit
Feature INTEGRATED CIRCUITS DATA SHEET TEA5591 AM/FM radio receiver circuit Product specification File unde.
Manufacture NXP
Datasheet
Download TEA5591 Datasheet


INTEGRATED CIRCUITS DATA SHEET TEA5591 AM/FM radio receive TEA5591 Datasheet
INTEGRATED CIRCUITS DATA SHEET TEA5591A AM/FM radio receiv TEA5591A Datasheet




TEA5591
INTEGRATED CIRCUITS
DATA SHEET
TEA5591
AM/FM radio receiver circuit
Product specification
File under Integrated Circuits, IC01
June 1989



TEA5591
Philips Semiconductors
AM/FM radio receiver circuit
Product specification
TEA5591
GENERAL DESCRIPTION
The TEA5591 is an integrated radio circuit which is designed for use in portable receivers and clock radios. The IC is
also applicable to mains-fed AM an AM/FM receivers and car radio-receivers. The main advantage of this IC is its ability
to operate over a wide range of supply voltages without loss of performance. The AM circuit incorporates a balanced
mixer and a ‘one-pin’ oscillator, which operates in the 0.6 MHz to 30 MHz frequency range, with amplitude control. The
circuit also includes an IF amplifier, a detector and an AGC circuit which controls the IF amplifier and the mixer. The FM
circuit incorporates an RF amplifier, a balanced mixer and a ‘one-pin’ oscillator together with two AC coupled IF amplifiers
(with distributed selectivity), a quadrature demodulator for the ceramic filter and internal AFC.
Features
DC AM/FM switch facility
Three internal separate stabilizers to enable operation over a wide range of supply voltages (1.8 to 15 V)
All pins (except pin 9) are ESD protected.
QUICK REFERENCE DATA
PARAMETER
Supply voltage (pin 8)
Supply current
AM part
FM part
Operating ambient temperature range
AM performance (pin 13)
RF sensitivity
RF input voltage
RF input voltage
Signal plus noise-to-noise ratio
AF output voltage
Total harmonic distortion
FM performance (pin 1)
RF sensitivity
RF input voltage
3 dB before limiting
Signal plus noise-to-noise ratio for:
RF input signal voltage (Vi)
AF output voltage
Total harmonic distortion
CONDITIONS
m = 0.3
Vo = 10 mV
(S+N)/N = 26 dB
Vi = 1 mV
f = 22.5 kHz
Vi = 3.0 µV
Vi = 1 mV
Vi = 100 µV
SYMBOL MIN. TYP. MAX. UNIT
VP
1.8 3.0 15
V
IP(AM)
IP(FM)
Tamb
14
17
15
19 mA
23 mA
+60 °C
Vi
Vi
(S+N)/N
Vo
THD
3.5
17
48
50
0.7
µV
µV
dB
mV
%
Vi
(S+N)/N
(S+N)/N
Vo
THD
23
75
2.3 4.0 µV
26
60
90
0.8
dB
dB
mV
%
PACKAGE OUTLINE
20-lead DIL; plastic (SOT146); SOT146-1; 1996 August 14.
June 1989
2




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