Photodiode. TEMD5000 Datasheet

TEMD5000 Datasheet PDF


Part TEMD5000
Description Silicon PIN Photodiode
Feature TEMD5000 Vishay Telefunken Silicon PIN Photodiode Description TEMD5000 is a high speed and high sen.
Manufacture Vishay Telefunken
Datasheet
Download TEMD5000 Datasheet


TEMD5000 Vishay Telefunken Silicon PIN Photodiode Descripti TEMD5000 Datasheet




TEMD5000
Silicon PIN Photodiode
Description
TEMD5000 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replace-
ment of TO–5 devices in many applications.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation. The large active area
combined with a flat case gives a high sensitivity at a
wide viewing angle.
Features
D Large radiant sensitive area (A=7.5 mm2)
D Wide angle of half sensitivity ϕ = ± 65°
D High photo sensitivity
D Fast response times
D Small junction capacitance
D Suitable for visible and near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
xt 3 s
TEMD5000
Vishay Telefunken
12775
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
K/W
Document Number 81552
Rev. 3, 25-May-00
www.vishay.de FaxBack +1-408-970-5600
1 (5)



TEMD5000
TEMD5000
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Test Conditions
mIR = 100 A, E = 0
Symbol Min
V(BR) 60
Typ Max Unit
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2 30 nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
VR = 3 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
EA = 1 klx
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
EA = 1 klx, VR = 5 V
lEe = 1 mW/cm2,
= 950 nm, VR = 5 V
CD
Vo
TKVo
Ik
Ik
TKIk
Ira
Ira
40
25
350
–2.6
70
50
0.1
75
55
40 pF
mV
mV/K
mA
mA
%/K
mA
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
lVR = 10 V, = 950 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
ϕ
ll0p.5
NEP
tr
tf
±65
900
600...1050
4x10–14
100
100
deg
nm
nm
W/Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20 40
VR=10V
60 80
100
94 8403
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
l1.2 VR=5V
=950nm
1.0
0.8
0.6
0 20 40 60 80 100
94 8416
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81552
Rev. 3, 25-May-00






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