Silicon PIN Photodiode
TEMD5100
Vishay Semiconductors
Description
TEMD5100 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(λp = 950 nm). The large active area combined with a
flat case gives a high sensitivity at a wide viewing
angle.
12775
Featu.
Silicon PIN Photodiode
Silicon PIN Photodiode
TEMD5100
Vishay Semiconductors
Description
TEMD5100 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(λp = 950 nm). The large active area combined with a
flat case gives a high sensitivity at a wide viewing
angle.
12775
Features
• Large radiant sensitive area (A = 7.5 mm2) • Wide angle of half sensitivity ϕ = ± 65 ° • High photo sensitivity • Fast response times • Small junction capacitance • Plastic case with IR filter (λ = 950 nm) • Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Power Dissipation Junction Temperature
Tamb ≤ 25 °C
Storage Temperature Range
Soldering Temperature
t≤3s
Thermal Resistance Junction/ Ambient
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Breakdown Voltage
IR = 100 µA, E = 0
Reverse Dark Current
VR = 10 V, E = 0
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Symbol
Value
Unit
VR
60
V
PV
215
mW
Tj
100
°C
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Symbol
Min
Typ.
Max
Unit
V(BR).