AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L
650V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N65 &...
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L
650V, 12A N-Channel
MOSFET
General Description
Product Summary
The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
750V@150℃ 12A < 0.72W
TO-220
Top View TO-220F
TO-263 D2PAK
D
D
AOT12N65
S D G
Orderable Part Number
AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L
AOTF12N65(L)
GD S
Package Type
TO-220 Pb Free TO-220F Pb Free TO-220F Green
TO-263 Green
S
G
G
S
AOB12N65L
Form
Tube Tube Tube Tape & Reel
Minimum Order Quantity
1000 1000 1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)12N65(L)
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
12 7.7
Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
IDM IAR EAR EAS
dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
278 2.2
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
...
