TF414

Ordering number : ENA2259B TF414 N-Channel JFET 40V, 50 to 130A, 0.11mS, SOT-883 http://onsemi.com Features  Small IGSS : max 500pA (VGS= 20V, VDS=0V)  Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz)  Ultrasmall package facilitates miniaturization in end products  Halogen free compliance Applications  Impedance conversion, infrared sensor applications Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Drain to Source Voltage VDSS 40 Gate to Drain Voltage VGDS 40 Gate Current IG 10 Drain Current ID 1 Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Unit V V mA mA mW C C Marking 31 2 SOT-883 A4 M M = Date Code Ordering & Package Information Device TF414T5G Pb-free and Halogen Free Package SOT-883 Shipping 8,000 pcs. / reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta  25C Parameter Gate to Drain Breakdown Voltage Gate to Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Tr...