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TF44710A

Dynex Semiconductor

Fast Switching Thyristor

TF447..A TF447..A Fast Switching Thyristor Replaces March 1998 version, DS4273-2.4 DS4273-3.0 January 2000 APPLICATION...


Dynex Semiconductor

TF44710A

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Description
TF447..A TF447..A Fast Switching Thyristor Replaces March 1998 version, DS4273-2.4 DS4273-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1200V IT(RMS) 470A ITSM 5000A dV/dt 200V/µs dI/dt 500A/µs tq 20µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1200 1000 Conditions TF447 12A TF447 10A VRSM = VRRM + 100V IDRM = IRRM = 25mA at VRRM or VDRM & Tvj Lower voltage grades available. Outline type code: MU86 See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 300 470 Units A A 1/13 TF447..A SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions tp = 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 5.0 125 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 5.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 4.75 125 150 5.25 o Min. dc Anode dc - Max. 0.07 0.133 0.154 0.02 0.04 125 Units o C/W o C/W C/W C/W C/W o o Double side ...




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