TF561S-A

TO-220F 5A High sensitive Thyristor TF541S-A,TF561S-A s Features qRepetitive peak off-state voltage: VDRM=400, 600V qAverage on-state current: IT(AV)=5A qHigh sensitive Gate trigger current: IGT=0.2mA max qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min External Dimensions (Unit: mm) φ 3.3±0.2 16.9±0.3 0.2 8.4± 4.0±0.2 10.0±0.2 4.2± 2.8 0.2 C 0.5 0.8±0.2 a b 1.35±0.15 1.35± +0.2 0.85 – 0.1 0.15 3.9± 0.2 2.54 2.2±0.2 2.54 +0.2 0.45 – 0.1 2.4±0.2 a. Part Number b. Lot Number (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO Ratings TF541S-A 400 400 500 500 5.0 7.8 80 2.0 10 5.0 5.0 0.5 – 40 to +125 – 40 to +125 1500 TF561S-A 600 600 700 700 Unit V V V V A A A A V V W W °C °C V Conditions Tj= –40 to +125°C, RGK =470Ω 50Hz Half-cycle sinewave, Continuous current, Tc=88°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10% 50Hz Sine wave, RMS, Terminal to Case, ...