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TF66612A Datasheet

Part Number TF66612A
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Switching Thyristor
Datasheet TF66612A DatasheetTF66612A Datasheet (PDF)

TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 700A ITSM 9000A dV/dt 300V/µs dI/dt 500A/µs tq 20µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF66.

  TF66612A   TF66612A






Fast Switching Thyristor

TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 700A ITSM 9000A dV/dt 300V/µs dI/dt 500A/µs tq 20µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF666 14A TF666 12A TF666 10A TF666 08A TF666 06A VRSM = VRRM + 100V IDRM = IRRM = 35mA at VRRM or VDRM & Tvj Outline type code: MU171. See Package Details for further information. Lower voltage grades available. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 446 700 Units A A 1/13 TF666..A SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 9.0 405.0 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 9.5 125 150 10.5 o Min. dc Anode dc - Max. 0.


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