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TF70910Y

Dynex Semiconductor

Fast Switching Thyristor

TF709..Y TF709..Y Fast Switching Thyristor Replaces March 1998 version, DS4277-2.2 DS4277-3.0 January 2000 APPLICATION...


Dynex Semiconductor

TF70910Y

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TF709..Y TF709..Y Fast Switching Thyristor Replaces March 1998 version, DS4277-2.2 DS4277-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 900A ITSM 12000A dV/dt 300V/µs dI/dt 500A/µs tq 25µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF709 14Y TF709 12Y TF709 10Y TF709 08Y TF709 06Y VRSM = VRRM + 100V IDRM = IRRM = 40mA at VRRM or VDRM & Tvj Outline type code: MU171. See Package Details for further information. Lower voltage grades available. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 573 900 Units A A 1/13 TF709..Y SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 12.0 720 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 14.25 125 150 15.75 o Min. dc Anode dc - Max...




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