TF841S

TO-220F 8A Thyristor TF821S, TF841S, TF861S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=8A qGate trigger current: IGT=15mA max qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min External Dimensions (Unit: mm) φ 3.3±0.2 8.4±0.2 4.0±0.2 10.0±0.2 4.2± 2.8 0.2 C 0.5 16.9± 0.3 3.9±0.2 0.8±0.2 a b 1.35±0.15 1.35± +0.2 0.85 – 0.1 0.15 qUL approved type available 2.54 2.2±0.2 2.54 +0.2 0.45 – 0.1 2.4±0.2 a. Part Number b. Lot Number (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO Ratings TF821S 200 200 300 300 TF841S 400 400 500 500 8.0 12.6 120 2.0 10 5.0 5.0 0.5 – 40 to +125 – 40 to +125 1500 TF861S 600 600 700 700 Unit V V V V A A A A V V W W °C °C V Conditions Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=87°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10% 50Hz Sine wa...