TG2006F

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.02 g (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Supply voltage VDD1 VDD2 5 5 Gate voltage VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature range Topr −40~85 Storage temperature range Tstg −55~150 Note 1: When mounted on 2.5 cm2 × 1.6 t glass epoxy board. Unit V V V mW mW °C °C 1 2002-07-31 Classify Rank This device is classified by Fig.1. And satisfy ELECTRICAL CHARACTERISTICS by Vg Condition on each rank. The rank division is performed for every reel and can't order to choose any rank. Table 1 TG2006F Rank A B Vg Condition Vg = 0 V Vg = 1 V Caution This device is electrostatic sensitivity. Please handle with caution. Electrical Characteristics (Vd = 3 V, Vg = (Note2), f = 1.9 GHz, Ta = 25°C, Zg = ZI = 50 Ω, 1/2 duty operation) (Note 4) Characteristics Frequency Total current Gate current Output power Small signal gain Adjacent channel leakage power ratio Harmonics Input VSWR Load mismatch Stability Symbol frange It IG PO GP ACP (1) ACP (2) 2f0 3f0 VSWRin ― ― Test Circuit Test Condition Min Typ. Max Unit ― ― 1...