Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 30 dBm Nominal P1dB 38dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications Point-to-Point Radi...
