TGA1141

Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, Psat 33dBm @ 6V , 34dBm @7V Bias 6 - 7V @ 1.5A Primary Applications Military Radar Systems Ka Band Sat-Com Point-to-Point Radio Chip Dimensions 4.13 mm x 3.3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 18 Performance Summary Table Description Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.2 GHz ~ 5 dB nom. 33 – 36 GHz > 8 dB nom, 34 - 35.2 GHz > 7 dB nom, 33 - 36 GHz 32.3dBm min. 34 –35.2 GHz 31.5dBm min, 34 – 35.2 GHz over temp. > 20% +25C Tested under –26, +25, & +100C Predict: -43C < 1.5 A max over operating frequency and Temp. range +6V 4.134 mm x 3.300 mm 2 13.6mm 16 14 Frequency range Small signal gain Input return loss 30 32 34 36 38 40 12 10 Frequency (GHz) Output return loss Output power 35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 32 33 34 35 Frequency (GHz) 36 37 P1dB_ave Psat_ave PAE Operating temperature range Ids Vds Die size Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Feb 4, 2000 TGA1...