TGA1172

Advance Product Information March 21, 2000 27 - 32 GHz 1W Power Amplifier TGA1172 Key Features 0.25 um pHEMT Technology 18 dB Gain at 28 GHz 29 dBm Nominal P1dB 37dBm OTOI typical at 28GHz Input/Output RL < -10 dB Bias 6 - 7V @ 630 mA Chip Dimensions 2.69 mm x 1.37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Primary Applications Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com Vd1 Vg2 Vd2 Vg3 RF OUT Vd3 6V, 630 mA 5 0 -5 -10 -15 -20 10 15 S11 S21 15 5 Gain (dB) -5 -15 -25 S22 20 25 30 35 -35 -45 40 RF IN 600µm 1200µm 2400µm Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 Amplifier Topology Frequency (GHz) Output Power at P1dB 32 30 29 28 27 26 25 26 27 28 29 30 31 32 Frequency (GHz) Output TOI (dBm) Output Third Order Intercept 40 39 38 37 36 35 34 33 32 31 30 26 27 28 29 30 31 P1dB (dBm) 6V, 630 mA ( ) 6V, 630 mA 31 32 33 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information March 21, 2000 TGA1172 TGA1172 Single tone pout and IMD3 vs Pin Frequency = 28GHz, 6V, 630 mA 25 10 20 0 15 -10 10 SCL Power 5 IMD3 -20 -30 0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5 -40 TGA1172 Single tone pout and IMD3 vs Pin Frequency = 31GHz, 6V, 630 mA 25...