TGA1319B

Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319B Key Features and Performance 0.15um pHEMT Technology 21-27 GHz Frequency Range 1.75 dB Nominal Noise Figure 19 dB Nominal Gain 8dBm Pout 3V, 45 mA Self -biased Point-to-Point Radio Point-to-Multipoint Communications 5 0 -5 Chip Dimensions 2.235 mm x 1.145 mm Preliminary Data, 6-10 Fixtured samples @ 25C two 1-mil ball bonds at RF interconnects 6.0 5.0 4.0 Primary Applications e 3.0 2.0 1.0 0.0 15.0 S11 -10 (dB) -15 -20 -25 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 Frequency (GHz) Frequency (GHz) NF @ 25C 25 0 -5 S11 @ 25C 20 -10 -15 15 S21 (dB) 10 S22 (dB) -20 -25 -30 5 -35 -40 0 1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 -45 1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 Frequency (GHz) Fre que ncy (GHz) Gain @ 25C S22 @ 25C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information August 29, 2000 TGA1319B Vd=3V 100 pF 100 pF 100 pF Gnd TGA1319B - Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and proces...