TGA2216-SM

Applications  Commercial and military radar  Communications  Electronic Warfare TGA2216-SM 0.1 – 3.0GHz 10W GaN Power Amplifier Product Features  Frequency Range: 0.1 – 3.0GHz  PSAT: >40dBm at PIN = 27dBm  P1dB: >35dBm  PAE: 50% @ midband  Large Signal Gain: >13dB  Small Signal Gain: 21dB  Bias: VD = 40V, IDQ = 360mA, VG1 = -2.4V Typical, VG2 = +17.7V Typical  Wideband Flat Gain and Power  Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20 RF OUT 19 18 17 9 10 11 12 13 14 15 16 General Description Pad Configuration TriQuint’s TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40V operation. The TGA2216-SM operates from 0.1 - 3.0GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 40% power-added efficiency. The TGA2216-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2216-SM is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and...