Ka-Band 3 Watt Power Amplifier
TGA2575-TS
Ka-Band 3 Watt Power Amplifier
Applications
Military Radar Communications
Product Features
Frequency R...
Description
TGA2575-TS
Ka-Band 3 Watt Power Amplifier
Applications
Military Radar Communications
Product Features
Frequency Range: 32.0 – 38.0 GHz Power: 35.5 dBm Psat PAE: 22% Gain: 19 dB Return Loss: 12 dB Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical Dimensions: 5.31 x 8.92 x 0.49 mm
Functional Block Diagram
C5 100 pF
6 TGA2575-TS
C3 1000 pF
5
C1 1000 pF
14
C6 100 pF
C4 1000 pF
2
C2 1000 pF
3
General Description
Bond Pad Configuration
TriQuint’s TGA2575-TS is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band.
The TGA2575-TS is a 2 mil thick GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.
Pin #
1 2, 6 3, 5 4
Symbol
RF In Vg Vd
RF Out
Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities.
The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant
Data Sheet: Rev - 12/14/12 © 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
ECCN
Description
TGA2575-TS 3A001.b.2.d Ka-band Power Amplifier
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