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TGA2578-CP

TriQuint Semiconductor

30W GaN Power Amplifier

Applications  Electronic Warfare  Radar  Communications  Test Instrumentation  EMC Amplifier TGA2578-CP 2 to 6 GHz...


TriQuint Semiconductor

TGA2578-CP

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Description
Applications  Electronic Warfare  Radar  Communications  Test Instrumentation  EMC Amplifier TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier Product Features  Frequency Range: 2 – 6 GHz  Pout: 45 dBm at PIN = 23 dBm  PAE: >30% CW  Small Signal Gain: >26 dB  IM3: -30 dBc @ 30 dBm Pout/Tone  Bias: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical  Package Dimensions: 15.2 x 15.2 x 3.5 mm  Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General Description TriQuint’s TGA2578-CP is a packaged wideband power amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30 W saturated output power with a power-added efficiency of > 30 %, and > 26 dB small signal gain. The TGA2578-CP is offered in a 10-lead 15 x 15 mm bolt-down package. The package has a pure Cu base, offering superior thermal management. The TGA2578CP is ideally suited to support both commercial and defense applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Lead free and RoHS compliant. Evaluation Boards are available upon request. Pin Configuration Pad No. 1, 5 2, 4, 7, 9 3 6, 10 8 Symbol VG GND RFIN VD RFOUT Ordering Information Part TGA2578-CP ECCN Description 3A001.b.2.a 2 – 6 GHz, 30 W GaN Power Amplifier Preliminary Datasheet: 02-03-15 © 2014 TriQuint - 1 of 12 - Disclaimer: Subject to change without notice www.triquint.co...




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