TGA2579-2-FL

Applications  Ku-band Communications TGA2579-2-FL 20W Ku-Band GaN Power Amplifier Product Features  Frequency Range: 14.0 – 15.35 GHz  PSAT : 43 dBm  PAE: 27%  Small Signal Gain: 35 dB  Integrated Voltage Detector  Bias: VD = 25 V, IDQ = 1.0 A, VG = -2.4 V Typical  Package Dimensions: 11.38 X 17.33 X 3.0 mm Functional Block Diagram 1 14 2 13 3 12 4 11 5 10 69 78 General Description TriQuint’s TGA2579-2-FL is a power amplifier operating from 14.0 to 15.35 GHz and typically provides 43 dBm of saturated output power, 27% power-added efficiency and 35 dB of small signal gain at mid band. The TGA2579-2-FL features low loss ground-signalground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer board. Ideally suited for Ku-band communications, the TGA2579-2-FL supports key commercial and defenserelated frequency bands. TriQuint’s 0.25um GaN on SiC process offers superior electrical performance while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for reliable high power operation. Lead-free and RoHS compliant. Pad Configuration Pad No. 1, 7, 8, 14 2, 6 3, 5, 10, 12 4 9 11 13 Symbol VD VG GND RF IN Voltage Detector RF OUT N/C Ordering Information Part ECCN Description TGA2579-2-FL 3A001.b.2.b GaN Power Amplifier Preliminary Datasheet: Rev - 08-16-13 © 2013 TriQuint - 1 of 12 - Disclaimer: Subject to change without notice www.triquint.com Absolute Maximum Ratings Param...