25 Watt Ku-Band GaN Power Amplifier
TGA2579-FL
25 Watt Ku-Band GaN Power Amplifier
Applications
Ku-band communications
Product Features
Frequency Ran...
Description
TGA2579-FL
25 Watt Ku-Band GaN Power Amplifier
Applications
Ku-band communications
Product Features
Frequency Range: 13.75 - 15.35 GHz Saturated Output Power: 44 dBm Power-added Efficiency: 30% Small Signal Gain: 32 dB Bias: Vd = 25 V, Idq = 1A, Vg = -3.4V typical
Functional Block Diagram
General Description
The TriQuint TGA2579-FL is a packaged Ku-band power amplifier fabricated on TriQuint’s productionreleased, 0.25um GaN on SiC process. Operating from 13.75 to 15.35 GHz, the TGA2579-FL typically provides 44 dBm of saturated output power, 30% power-added efficiency and 32dB of small signal gain.
The TGA2579-FL features low loss ground-signalground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer board.
Ideally suited for Ku-band communications, the TGA2579-FL supports key commercial and defense-related frequency bands.
TriQuint’s 0.25um GaN on SiC process offers superior electrical performance through Ku-band while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for high power operation.
Lead-free and RoHS compliant.
Pin Configuration
Pin #
1 2,6 3,5,10,12 4 7 8 9 11
13 14
Symbol
Vd Vg Gnd RF In Vd Vd Vdet RF Out
N/C Vd
Ordering Information
Part No.
ECCN
TGA2579-FL 3A001.b.2.b
Description
Ku-band Power Amplifier
Preliminary Data Sheet: 1/8/2013 © 2012 TriQuint Semiconductor, Inc.
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