TGA4511-EPU

Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier Key Features TGA4511-EPU 0.15 um pHEMT Technology 15 dBm Nominal Pout @ 35 GHz 17 dB Nominal Gain @ 35 GHz 2.5 dB Noise Figure @ 35 GHz Bias Conditions: 3.5V, 110 mA Chip Dimensions: 2.7mm x 1.8mm Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 4 3 2 1 0 26 28 30 32 34 36 38 40 Frequency (GHz) Primary Applications Point-to-Point Radio Point-to-Multipoint Radio www.DataSheet4U.com Noise Figure (dB) 22 20 Gain (dB) 18 16 14 12 10 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information November 2, 2004 TABLE I MAXIMUM RATINGS 5/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 6V -2 to 0 V 400 mA 40 mA TBD TBD 150 C 320 C -65 to 150 C 0 0 0 NOTES 4/ V I + 4/ | IG | PIN PD T CH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to fa...