TGAN30N120FD

Features: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N120FD Field Stop Trench IGBT E GC Device TGAN30N120FD Package TO-3PN Marking TGAN30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF IFM PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Value 1200 ±20 60 30 90 30 90 329 132 -55 ~ 150 -55 ~ 150 300 Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.38 2.1 40 Oct. 2013 : Rev1.1 www.trinnotech.com Remark RoHS Unit V V A A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN30N120FD Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero ...