Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeff...
Features: 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification
Applications : Induction Heating, Soft switching application
TGAN30N135FD1
Field Stop Trench IGBT
E GC
Device TGAN30N135FD1
Package TO-3PN
Marking TGAN30N135FD1
Absolute Maximum Ratings
Parameter
Symbol
Collector-Emitter
Voltage
Gate-Emitter
Voltage Continuous Collector Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation
Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
VCES VGES
Ic
ICM IF
PD
TJ TSTG TL
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Value 1350 ±20
60 30 90 30 329 132 -55 ~ 150 -55 ~ 150
300
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.38 2.1 40
Feb. 2014 : rev 0.0
www.trinnotech.com
Remark RoHS
Unit V V A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGAN30N135FD1
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown
Voltage Zero Gate
Voltage Collector Current Gate – Em...