Features
• 1100V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Features
1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification
Applications
Induction Heating, Soft switching application
TGAN40N110FD
Field Stop Trench IGBT
E GC
Device TGAN40N110FD
Package TO-3PN
Marking TGAN40N110FD
Absolute Maximum Ratings
Parameter
Collector-Emitter
Voltage
Gate-Emitter
Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Power Dissipation
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
IC
ICM IF
PD
TJ TSTG TL
Value
1100 ±20 80 40 120 40 338 135 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.37 1.59 40
June 2015. Rev 0.0
www.trinnotech.com
Remark RoHS
Unit V V A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGAN40N110FD
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Zero Gate
Voltage Collector Current Gate – Emitter Leakage Current
ON Gate – Emitter T...