Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification
Applications : Induction Heating, Soft Switching Application, UPS, Welder, Inverter
TGAN60N60FD
Field Stop Trench IGBT
E GC
Device TGAN60N60FD
Package TO-3PN
Marking TGAN60N60FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage Continuous Collector Current Pulsed Colle.
Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification
Applications : Induction Heating, Soft Switching Application, UPS, Welder, Inverter
TGAN60N60FD
Field Stop Trench IGBT
E GC
Device TGAN60N60FD
Package TO-3PN
Marking TGAN60N60FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF
PD
TJ TSTG TL
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RθJC (IGBT) RθJC (DIODE)
RθJA
Value 600 ±20 120 60 180 30 347 139 -55 ~ 150 -55 ~ 150 300
Value 0.36 1.12 40
Remark RoHS
Unit V V A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
Mar. 2013
www.trinnotech.com
1/8
TGAN60N60FD
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate.