TGF2023-2-01

TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 2 1 Key Features  Frequency Range: DC - 18 GHz  Output Power (P3dB)1: 38 dBm  Maximum PAE1: 71.6%  Linear Gain1: 18 dB  Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA  Technology: TQGaN25 on SiC  Chip Dimensions: 0.82 x 0.66 x 0.10 mm Note 1: @ 3 GHz Pad Configuration Pad No. 1 2 Backside Symbol VG / RF IN VD / RF OUT Source / Ground Data Sheet Rev. F, December 2, 2019 | Subject to change without notice Applications  Defense & Aerospace  Broadband Wireless Ordering Information Part Number TGF2023-2-01 Description 6 Watt GaN HEMT 1 of 23 www.qorvo.com TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) 100 V Drain Voltage (VD) Gate Voltage Range (VG) 40 V −7 to 2 V Dra...