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TGF2023-2-20 Datasheet

Part Number TGF2023-2-20
Manufacturers TriQuint
Logo TriQuint
Description 90 Watt Discrete Power GaN on SiC HEMT
Datasheet TGF2023-2-20 DatasheetTGF2023-2-20 Datasheet (PDF)

  TGF2023-2-20   TGF2023-2-20
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Part Number TGF2023-2-20
Manufacturers Qorvo
Logo Qorvo
Description SiC HEMT
Datasheet TGF2023-2-20 DatasheetTGF2023-2-20 Datasheet (PDF)

  TGF2023-2-20   TGF2023-2-20
TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 1-16 17 Pad Configuratio.






90 Watt Discrete Power GaN on SiC HEMT

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2013-10-29 : W6053S    MAA723    MAA723H    LDC311G6003B-601    LDC32900M03B-703    LDC43850M03B-401    LDC55250M03B-200    H20R1203    F4905S    AP630GP   


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