TGF2023-2-20 Datasheet
Part Number |
TGF2023-2-20 |
Manufacturers |
TriQuint |
Logo |
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Description |
90 Watt Discrete Power GaN on SiC HEMT |
Datasheet |
TGF2023-2-20 Datasheet (PDF) |
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TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency applications.
Lead-free and RoHS compliant
Functional Block Diagram
1-16
17
Pad Configuratio.
90 Watt Discrete Power GaN on SiC HEMT
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2013-10-29 : W6053S MAA723 MAA723H LDC311G6003B-601 LDC32900M03B-703 LDC43850M03B-401 LDC55250M03B-200 H20R1203 F4905S AP630GP