TGF4112-EPU

TGF4112-EPU 12 mm Discrete HFET  4112 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4112-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.3 V, Iq = 0.75 A and T A = 25°C 46 Pout 44 42 40 38 36 34 32 30 28 26 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 PAE 55 50 45 40 35 30 25 20 15 10 5 Input Power (dBm) 1 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com Power Added Efficiency % Output Power (dBm) TGF4112-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 0.9 A (Vg = -1.1 V), 0.72 A (Vg = -1.3 V), and 0.61 A (Vg = -1.5 V) 140 130 Predicted Channel Temp (°C) 120 110 100 90 80 70 60 50 40 30 60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 10 5 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 38 37 36 Output Power (dBm) 2 35 34 33 Tch 32 31 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 30 29 28 27 14 13 Gain (dB) 12 11 10 9 8 14 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 16 17 18 19 20 21 22 23 Input Power (dBm) 24 25 26 27 28 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com TGF4112-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 0.92 A (Vg = -1.1 V), 0.75 A (Vg = -1.3 V), and 0.65 A (Vg = -1.5 V) 140 130 Predicted Channel Temp (°C) 120 110 100 90 80 70 60 50 40 30 60 55 Power Adde...