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TGF4240-EPU HFET Datasheet PDF2.4mm Discrete HFET 2.4mm Discrete HFET |
| Part Number | TGF4240-EPU |
|---|---|
| Description | 2.4mm Discrete HFET |
| Feature | T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C . TGF42 40-EPU 2. 4mm Discrete HFET q q q q q q 2400 m x 0. 5 m Nominal Pout of 31. 5 - dBm at 8. 5 GHz Nominal Gain of 10 - d B at 8. 5 GHz Nominal PAE of 56% at 8. 5 GHz Suitable for high reliability appli cations 0,572 x 0,978 x 0,102 mm (0. 023 x 0. 039 x 0. 004 in. ) 4240 70 Freq = 8 . 5 GHz VD = 8 V I D = 100mA TA = 25° C PRELIMINARY RF PERFORMANCE Gain - dB and Output Power - dBm 35 30 25 20 15 10 5 0 0 5 10 15 20 25 Pout(dBm) Gain(d B) PAE(%) 60 50 40 30 20 10 0 Input P ower - dBm TriQuint Semiconductor, Inc . • Texas Fac . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
|
|
| Part Number | TGF4240-EPU |
|---|---|
| Description | 2.4mm Discrete HFET |
| Feature | T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C . TGF42 40-EPU 2. 4mm Discrete HFET q q q q q q 2400 m x 0. 5 m Nominal Pout of 31. 5 - dBm at 8. 5 GHz Nominal Gain of 10 - d B at 8. 5 GHz Nominal PAE of 56% at 8. 5 GHz Suitable for high reliability appli cations 0,572 x 0,978 x 0,102 mm (0. 023 x 0. 039 x 0. 004 in. ) 4240 70 Freq = 8 . 5 GHz VD = 8 V I D = 100mA TA = 25° C PRELIMINARY RF PERFORMANCE Gain - dB and Output Power - dBm 35 30 25 20 15 10 5 0 0 5 10 15 20 25 Pout(dBm) Gain(d B) PAE(%) 60 50 40 30 20 10 0 Input P ower - dBm TriQuint Semiconductor, Inc . • Texas Fac . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
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