MICROWAVE POWER GaN HEMT
TGI1314-50LA
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 47.0dBm at Pin= 42.0dBm
･HIGH GAIN
GL= 8.0dB at 13.75GHz to 14.5GHz
･LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 40.0dBm (Single Carrier Level)
･HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CO...
