MICROWAVE POWER GaN HEMT
TGI5059-120L
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 51.0dBm at Pin= 42....
MICROWAVE POWER GaN HEMT
TGI5059-120L
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN
GL= 13.5dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level
･HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 4.0A f = 5.0 to 5.9GHz @Pin= 42dBm
dBm A %
Linear Gain Gain flatness
GL
dB
@Pin= 20dBm
G
dB
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two-Tone Test
dBc
@Po=44.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – Pout)
X Rth(c-c)
°C
Recommended Gate Resistance (Rg): 28
MIN. 50.0 12.5 -25
TYP. MAX.
51.0
11.0 12.0
40
13.5
±0.8
-27
8.0
120 140
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 5V IDS= 10.0A
VDS= 5V IDS= 46mA
VDS= 5V VGS= 0V
VGSO IGS= -20mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-2.6 -4.0 -6.0
A
28
V
-10
°C/W
0.6
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as ...
