MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dB...
MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dBm ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -40dBc(Min.) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 1.75A f= 5.85 to 6.75 GHz @Pin= 35dBm
dBm 44.0 44.5
A
2.7
3.2
%
39
Linear Gain
Gain Flatness 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
GL G IM3 IDS2 Tch
@Pin= 20dBm
dB
dB
Two-Tone Test Po= 29dBm, Δf= 5MHz
dBc
(Single Carrier Level)
A
(VDS IDS Pin Pout)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 60
12.5 13.5
0.8
-40
-42
2.0
130 150
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 5V IDS= 2.5A VDS= 5V IDS= 12mA VDS= 5V VGS= 0V
Gate-Source Breakdown
Voltage
VGSO IGS= -5mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
1.2
V
-2.6 -4.0 -6.0
A
7.5
V
-10
°C/W
2.8
3.2
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