MICROWAVE POWER GaN HEMT
TGI5964-120L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 43d...
MICROWAVE POWER GaN HEMT
TGI5964-120L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 4.0A f= 5.9 to 6.4GHz @Pin= 43dBm
dBm A %
50.0
51.0 10.0 44
12.0
Linear Gain
Gain flatness 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
GL G IM3 IDS2 Tch
dB @Pin= 20dBm
dB
Two-Tone Test
dBc
Po= 44dBm, f= 5MHz
(Single Carrier Level)
A
(VDS IDS Pin Pout)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
12.5 13.5
0.8
-25
-30
8.0
120 140
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 5V IDS= 10.0A VDS= 5V IDS= 46mA VDS= 5V VGS= 0V
Gate-Source Breakdown
Voltage
VGSO IGS= -20mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-2.6 -4.0 -6.0
A
28
V
-10
°C/W
0.6
0.8
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