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TGM2635-CP Datasheet

Part Number TGM2635-CP
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description X-Band 100 W GaN Power Amplifier
Datasheet TGM2635-CP DatasheetTGM2635-CP Datasheet (PDF)

TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635–CP is a packaged X-band, high power amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process. The TGM2635–CP operates from 7.9 – 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power– added efficiency. The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports ar.

  TGM2635-CP   TGM2635-CP






X-Band 100 W GaN Power Amplifier

TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635–CP is a packaged X-band, high power amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process. The TGM2635–CP operates from 7.9 – 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power– added efficiency. The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGM2635-CP is ideally suited for both commercial and military X-Band radar systems, satellite communications systems, and data links. RoHS compliant. Key Features • Frequency Range: 7.9 – 11 GHz • PSAT: 50 dBm (PIN = 28 dBm) • PAE: 35% (PIN = 28 dBm) • Large Signal Gain: 22 dB (PIN = 28 dBm) • Small Signal Gain: 26 dB • Bias: VD = 28 V, IDQ = 1.3 A • Package Dimensions: 19.05 x 19.05 x 4.52 mm • Performance Under Pulsed Operation Functional Block Diagram Applications • X-band Radar • Satellite Communications • Data Links Top View Data Sheet Rev. H, May 2023 Ordering Information Part Description TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to −0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85.


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